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Details for:
Tan S. Long-Term Reliability of Nanometer VLSI Systems...2019
tan s long term reliability nanometer vlsi systems 2019
Type:
E-books
Files:
1
Size:
20.9 MB
Uploaded On:
Jan. 16, 2022, 2:53 p.m.
Added By:
andryold1
Seeders:
1
Leechers:
0
Info Hash:
D2304B170A61A422EFCD47FF398705416EAB8DCF
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Textbook in PDF format Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models. Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects. Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels. Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. Physics-Based EM Analysis and System-Level Dynamic Reliability Management. Introduction. Physics-Based EM Modeling. Fast EM Stress Evolution Analysis Using Krylov Subspace Method. Fast EM Immortality Analysis for Multi-Segment Copper Interconnect Wires. Dynamic EM Models for Transient Stress Evolution and Recovery. Compact EM Models for Multi-Segment Interconnect Wires. EM Assessment for Power Grid Networks. Resource-Based EM Modeling DRM for Multi-Core Microprocessors. DRM and Optimization for Real-Time Embedded Systems. Learning-Based DRM and Energy Optimization for Manycore Dark Silicon Processors. Recovery-Aware DRM for Near-Threshold Dark Silicon Processors. Cross-Layer DRM and Optimization for Datacenter Systems. Transistor Aging Effects and Reliability. Introduction. Aging-Aware Timing Analysis. Aging-Aware Standard Cell Library Optimization Methods. Aging Effects in Sequential Elements. Aging Guardband Reduction Through Selective Flip-Flop Optimization. Workload-Aware Static Aging Monitoring and Mitigation of Timing-Critical Flip-Flops. Aging Relaxation at Microarchitecture Level Using Special NOPs. ExtraTime: Modeling and Analysis of Transistor Aging at Microarchitecture-Level. Reducing Processor Wearout by Exploiting the Timing Slack of Instructions. Index
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Tan S. Long-Term Reliability of Nanometer VLSI Systems...2019.pdf
20.9 MB
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