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zhe c handbook silicon carbide materials devices 2023

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Textbook in PDF format Silicon carbide (SiC) has been an important wide bandgap (WBG) semiconductor material comparable or superior to traditional semiconductors. It exhibits interesting mechanical and electrical properties, such as high thermal conductivity, high critical electric breakdown field, excellent temperature stability, and good chemical inertness. These characteristics make SiC a promising material for a wide variety of high- power and high- temperature electronic device applications in harsh environment where traditional semiconductors lack sufficient durability. SiC, a IV- IV semiconductor with Si- to- C tetrahedral structure, forms close- packed planes stacking in different sequences and exhibits a large number (>250) of polytypes. Their different electronic energy band structures and invariant chemical composition of these polytypes allow a novel type band gap engineering for scientific and technological applications. This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs. Preface. Editor Biography. Contributors. General. Silicon Carbide: Presolar SiC Stardust Grains and the Human History of SiC from 1824 to 1974. Recent Progresses in Vapor- Liquid- Solid Growth of High- Quality SiC Single Crystal Films and Related Techniques. Spectroscopic Investigations for the Dynamical Properties of Defects in Bulk and Epitaxially Grown 3C-SiC/Si (100). SiC Materials, Devices, and Applications: A Review of Developments and Challenges in the 21st Century. Materials Growth and Processing. CVD of SiC Epilayers – Basic Principles and Techniques. Homo- Epitaxy of Thick Crystalline 4H- SiC Structural Materials and Applications in an Electric Power System. Epitaxial Growth and Structural Studies of Cubic SiC Thin Films Grown on Si- face and C- face 4H- SiC Substrates. SiC Thermal Oxidation Process and MOS Interface Characterizations: From Carrier Transportation to Single- Photon Source. SiC Materials Studies and Characterization. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals. Near- Infrared Luminescent Centers in Silicon Carbide. SiC Substrate and its Epitaxial Layers’ Analysis by Spectroscopic Ellipsometry. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon. SiC Devices and Developments. 4H- SiC- Based Photodiodes for Ultraviolet Light Detection. SiC Radiation Detector Based on Metal- Insulator- Semiconductor Structures. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X- ray Diffraction. Index

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Zhe C. Handbook of Silicon Carbide Materials and Devices 2023.pdf 90.1 MB

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zhe c handbook silicon carbide materials devices 2023