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enz c charge based mos transistor modeling 2006

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Textbook in PDF format The purpose of this book is to assemble and explain in a coherent manner all the know-how and all the publications related to the particular MOS transistor modeling approach embodied by the EKV model. This model borrows from the work of a long line of researchers, starting in the early times of semiconductor physics. It has its roots in the search of early designers of very low-power and low-voltage integrated circuits for a description of the transistor behavior fulfilling their specific needs. This book focuses on this particular line of research, with no intention to present all alternative ways of modeling the transistor. Being written by analog circuit designers, it is clearly design-oriented with the purpose of describing the transistor as the basic component of integrated circuits, rather than the result of a sequence of physical processing steps. It gives to emphasis highlighting the properties of the device that can be used by designers to build new robust circuits, or to understand existing circuits and assess their robustness. The book is organized in three hierarchically structured parts. It firstly describes the basic behavior of the generic MOS transistor, then focuses on additional effects essentially due to scaling down the device dimensions, and finally discusses the transistors to be used in RF circuits. Based on the charge in the channel, the EKV model describes in a continuous manner the static, dynamic and noise characteristics of the transistor down to very low current levels. The basic model requires a very limited set of parameters, all of them directly related to basic independent physical parameters. Intended for analog designers, it conserves the intrinsic source-drain symmetry of the transistor by using the substrate as the voltage reference and by introducing the concept of forward and reverse components of the drain current. This symmetrical approach makes it easier to understand the various modes of static operation of the device, and to describe them by a single uncomplicated equation. The charge-based approach lends itself naturally to a coherent description of the dynamic and noise behavior of the transistor

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Enz C. Charge-based MOS Transistor Modeling 2006.pdf 21.9 MB

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enz c charge based mos transistor modeling 2006